Estudio del efecto de estrés térmico y eléctrico en dispositivos electrónicos a través de mediciones de ruido de baja frecuencia.

Abstract

In this degree work, the effect of thermal and electrical stress on power semiconductor devices was studied through low-frequency noise measurements. As part of the methodology, the experimental design steps are described starting from establishing the stress requirements that must be applied to devices to demonstrate the presence of low-frequency noise. To accomplish the stress requirements, the selected software and hardware tools were a variable voltage source up to 1200V designed for the application of electrical stress, a temperature module composed of a mini heater and a control module designed for the thermal stress application together with the Keithley 4200-SCSn parameter analyzer for current-voltage characterization, and a low-frequency noise measurement system for characterization of conductive channels in electronic devices. The experimental design consists of five stages Cataloging and device selection, Voltage-Current Characterization, Low-frequency noise measurement, Thermal and electrical stress tests, and Statistics for device reliability. The results indicate a higher level of flicker noise after the application of stress related to changes in the threshold voltage, as a result of the applied stress, directly correlating these parameters. Through these obtained results, and the information consulted about the state of the art related to reliability in semiconductor devices, it can be inferred that a degradation mechanism known as "ionic contamination" has been activated on the devices under test.