Implementación de una cámara térmica con control de temperatura usando tarjetas de desarrollo embebido para aplicar estrés térmico durante pruebas HTRB en dispositivos semiconductores de potencia.

Abstract

The objective of this work was to adapt a thermal camera by controlling the temperature using embedded development boards to apply heat stress in tests of High temperature reverse bias (HTRB) in power semiconductor devices. In the first place, a bibliographic compendium of thermal control solutions and requirements in accelerated tests HTRB was performed. Next, the elements of necessary hardware and software. Then a conventional oven was characterized by applying an open loop step type identification test. Next, algorithms of non-linear control in an operating regime of 150 to 200 degrees Celsius implemented in the select STM32 development boards. For the power stage, a control was carried out by integral cycle calculated by the controller. On the other hand, a communication interface was used HMI using LabVIEW and STM Studio computer software. Before the testing stage A calibration of the sensors was carried out obtaining an indirect measure of temperature in the power devices. Subsequently, the selection of the controller was made through tests performance vs. HTRB testing requirements. Then a stress test was set up thermal over 80V reverse biased IRF530N MOSFETs at a temperature 180 degrees Celsius to evaluate the performance of the selected controller. According to the results obtained during the test, it was concluded that both the controller and the plant operated normally with low overshoot and an operation within the temperature range with a variation of 5 degrees Celsius from its set point. Finally, it is recommended to perform the temperature tests in a suitable workspace and safety regulations.