Aplicación de mediciones de ruido de baja frecuencia para el análisis de efectos de estrés térmico y eléctrico en dispositivos de potencia.

Abstract

This document presents the study of the effect of thermal and electrical stress on power semiconductor devices through low-frequency noise measurements. A High Temperature Reverse Bias test (HTRB) was applied to the power devices, determining their electrical characteristics before and after the HTRB. The tools used for this study were a variable voltage source up to 1200V designed for the application of electrical stress, a temperature module consisting of a miniheater and a control module designed for the application of thermal stress together with the Keithley 4200-SCSn parameter analyzer for current-voltage characterization and a low frequency noise measurement system for characterization of conductive channels in electronic devices. The results indicate a higher level of flicker noise in the considered MOSFETs after stress application that is related to changes in the threshold voltage because of the applied stress, directly correlating these parameters.